Abstract
GaInAs-InP and GaInAsP-InP multilayers have been investigated by transmission electron microscopy. Electron diffraction studies on 〈1¯10〉 edge-on samples indicate that atomic ordering produces a phase with R3¯m symmetry. This is of different symmetry from the one observed previously in GAlnAs, GaAsSb, and GalnAs. Only one or two variants of the ordered phase are observed in our layered structure.
- Received 30 January 1987
DOI:https://doi.org/10.1103/PhysRevLett.58.2567
©1987 American Physical Society