Atomic ordering in Ga0.47In0.53As and GaxIn1xAsyP1y alloy semiconductors

M. A. Shahid, S. Mahajan, D. E. Laughlin, and H. M. Cox
Phys. Rev. Lett. 58, 2567 – Published 15 June 1987
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Abstract

GaInAs-InP and GaInAsP-InP multilayers have been investigated by transmission electron microscopy. Electron diffraction studies on 〈1¯10〉 edge-on samples indicate that atomic ordering produces a phase with R3¯m symmetry. This is of different symmetry from the one observed previously in GAlnAs, GaAsSb, and GalnAs. Only one or two variants of the ordered phase are observed in our layered structure.

  • Received 30 January 1987

DOI:https://doi.org/10.1103/PhysRevLett.58.2567

©1987 American Physical Society

Authors & Affiliations

M. A. Shahid, S. Mahajan, and D. E. Laughlin

  • Department of Metallurgical Engineering and Materials Science, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213

H. M. Cox

  • Bell Communication Research, Red Bank, New Jersey 07701-7020

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Vol. 58, Iss. 24 — 15 June 1987

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