Sideband control in a millimeter-wave free-electron laser

J. Masud, T. C. Marshall, S. P. Schlesinger, F. G. Yee, W. M. Fawley, E. T. Scharlemann, S. S. Yu, A. M. Sessler, and E. J. Sternbach
Phys. Rev. Lett. 58, 763 – Published 23 February 1987
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Abstract

The frequency offset of the sideband instability in a free-electron laser (FEL) should depend on (1-v?/vg)1, where v? is the average longitudinal velocity of the electrons and vg is the group velocity of the electromagnetic waves. We have tested the v?/vg dependence of the sideband shift in a 2-mm, Raman-regime FEL oscillator. A change of v?/vg from 0.93 to 0.98, accomplished by an increase in the undulator period, resulted in the measured sideband shift increasing from 6% to 40%, in approximate agreement with theory.

  • Received 30 June 1986

DOI:https://doi.org/10.1103/PhysRevLett.58.763

©1987 American Physical Society

Authors & Affiliations

J. Masud, T. C. Marshall, S. P. Schlesinger, and F. G. Yee

  • Columbia University, New York, New York 10027

W. M. Fawley, E. T. Scharlemann, and S. S. Yu

  • Lawrence Livermore National Laboratory, Livermore, California 94550

A. M. Sessler and E. J. Sternbach

  • Lawrence Berkeley Laboratory, Berkeley, California 94720

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Vol. 58, Iss. 8 — 23 February 1987

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