Modification of the Electron-Phonon Interactions in GaAs-GaAlAs Heterojunctions

M. A. Brummell, R. J. Nicholas, M. A. Hopkins, J. J. Harris, and C. T. Foxon
Phys. Rev. Lett. 58, 77 – Published 5 January 1987
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Abstract

We report cyclotron and magnetophonon resonance experiments on GaAs-GaAlAs heterojunctions as a function of temperature. The cyclotron mass shows an anomalous increase with temperature, which we attribute to strong screening of the electron-optic-phonon interaction at low temperatures suppressing the polaron mass enhancement. The magnetophonon resonance results yield phonon frequencies significantly below the bulk GaAs LO values, suggesting that the electrons are interacting with phonons associated with the interface.

  • Received 18 August 1986

DOI:https://doi.org/10.1103/PhysRevLett.58.77

©1987 American Physical Society

Authors & Affiliations

M. A. Brummell, R. J. Nicholas, and M. A. Hopkins

  • Clarendon Laboratory, Oxford OX1 3PU, United Kingdom

J. J. Harris and C. T. Foxon

  • Philips Research Laboratories, Redhill RH1 5HA, Surrey, United Kingdom

Comments & Replies

Modification of the Electron-Phonon Interactions in GaAs-GaAlAs Heterojunctions

Marcos H. Degani and Oscar Hipólito
Phys. Rev. Lett. 59, 2820 (1987)

Brummell et al. Reply

M. A. Brummell, R. J. Nicholas, M. A. Hopkins, D. R. Leadley, J. J. Harris, and C. T. Foxon
Phys. Rev. Lett. 59, 2821 (1987)

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Vol. 58, Iss. 1 — 5 January 1987

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