Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy

Jagdeep Shah, Benoit Deveaud, T. C. Damen, W. T. Tsang, A. C. Gossard, and P. Lugli
Phys. Rev. Lett. 59, 2222 – Published 9 November 1987
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Abstract

We report a slow rise of luminescence in GaAs following subpicosecond photoexcitation and show that it results from a slow return of electrons from the L to the Γ valley. By fitting our data with an ensemble Monte Carlo calculation, we determine the Γ-L deformation potential to be (6.5±1.5)×108 eV/cm. We show that the electrons returning to the Γ valley act as a source of heating for the photoexcited plasma. We further show the importance of electron-electron scattering and inadequacy of a simple phonon-cascade model, even at a density as low as 5×1016 cm3.

  • Received 6 July 1987

DOI:https://doi.org/10.1103/PhysRevLett.59.2222

©1987 American Physical Society

Authors & Affiliations

Jagdeep Shah, Benoit Deveaud, T. C. Damen, and W. T. Tsang

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

A. C. Gossard

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07940

P. Lugli

  • Dipartimento di Fisica, Università di Modena, 41100 Modena, Italy

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Vol. 59, Iss. 19 — 9 November 1987

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