Surface X-Ray Scattering during Crystal Growth: Ge on Ge(111)

E. Vlieg; A. W. Denier van der Gon; J. F. van der Veen; J. E. Macdonald; C. Norris

doi:10.1103/PhysRevLett.61.2241

Surface X-Ray Scattering during Crystal Growth: Ge on Ge(111)

E. Vlieg, A. W. Denier van der Gon, J. F. van der Veen, J. E. Macdonald, and C. Norris

Phys. Rev. Lett. 61, 2241 – Published 7 November 1988

Abstract

The growth of Ge on Ge(111) has been monitored by in situ x-ray reflectivity and diffraction. For suitably chosen geometries, the scattered x-ray intensity is extremely sensitive to atomic-scale surface morphology; dramatic intensity changes occur upon deposition of a fraction of a monolayer. For substrate temperatures up to 200°C oscillations are observed in the scattered intensity, indicating growth by two-dimensional nucleation. Reflectivity curves reveal the detailed surface atomic geometry. All observations can be quantitatively understood by use of kinematical diffraction theory.