We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as ${\mathit{C}}_{2\mathit{v}}$, and from the observed hyperfine interactions the defect is identified as a di-hydrogen–vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.

• Received 4 April 1990

DOI:https://doi.org/10.1103/PhysRevLett.64.3042