Abstract
The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of ‘‘macroscopic’’ Ge islands.
- Received 23 April 1990
DOI:https://doi.org/10.1103/PhysRevLett.65.1020
©1990 American Physical Society