Vacancy in Si: Successful description within the local-density approximation

Osamu Sugino and Atsushi Oshiyama
Phys. Rev. Lett. 68, 1858 – Published 23 March 1992
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Abstract

We have performed large-scale total-energy electronic-structure calculations within the local-density approximation for the negatively charged vacancy in Si. The obtained Jahn-Teller distortion, the electronic structures, and the hyperfine coupling tensors are in good agreement with the experimental data available, indicating the validity of the one-electron theory, contrary to the prevailing picture based on model calculations.

  • Received 31 October 1991

DOI:https://doi.org/10.1103/PhysRevLett.68.1858

©1992 American Physical Society

Authors & Affiliations

Osamu Sugino and Atsushi Oshiyama

  • Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305, Japan

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Issue

Vol. 68, Iss. 12 — 23 March 1992

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