Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures

G. Biasiol; L. Sorba; G. Bratina; R. Nicolini; A. Franciosi; M. Peressi; S. Baroni; R. Resta; A. Baldereschi

doi:10.1103/PhysRevLett.69.1283

Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures

G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Franciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi

Phys. Rev. Lett. 69, 1283 – Published 24 August 1992

Abstract

We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAs-Ge(001) heterojunctions. We found that well-defined in- equivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 1–2 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.

Received 12 May 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.1283

Authors & Affiliations

G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Franciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi

Laboratorio TASC(enIstituto Nazionale di Fisica della Materia, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
Dipartimento di Fisica Teorica, Università di Trieste, Strada Costiera 11, I-34014 Trieste, Italy
SISSA(enScuola Internazionale Superiore di Studi Avanzati, via Beirut 4, I-34014 Trieste, Italy
Institut Romand de Recherche Numérique en Physique des Matériaux, PHB Ecublens, CH-1015 Lausanne, Switzerland