Decay kinetics of the 4.4-eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>

Hiroyuki Nishikawa; Eiki Watanabe; Daisuke Ito; Yoshimichi Ohki

doi:10.1103/PhysRevLett.72.2101

Decay kinetics of the 4.4-eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous ${SiO}_{2}$

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, and Yoshimichi Ohki

Phys. Rev. Lett. 72, 2101 – Published 28 March 1994

Abstract

We present the first observation of 4.4 eV photoluminescence (PL) decay in an oxygen-deficient-type silica excited with ultraviolet and vacuum ultraviolet photons from synchrotron radiation. The lifetime of the 4.4 eV PL is 4.2, 4.3, and 2.1 ns for the 5.0, 6.9, and 7.6 eV excitations, respectively, indicating the presence of multiple decay channels. This can be explained by an energy diagram involving the interconversion between two states of the oxygen-deficient-type defect.