Silicon-Neuron Junction: Capacitive Stimulation of an Individual Neuron on a Silicon Chip

Peter Fromherz and Alfred Stett
Phys. Rev. Lett. 75, 1670 – Published 21 August 1995
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Abstract

An identified nerve cell of the leech is attached to a planar silicon microstructure of p-doped silicon covered by a thin layer of insulating silicon oxide. A voltage step, applied between silicon and electrolyte, induces a capacitive transient in the cell which elicits an action potential. The capacitive extracellular stimulation is described by an equivalent electrical four-pole.

  • Received 21 February 1995

DOI:https://doi.org/10.1103/PhysRevLett.75.1670

©1995 American Physical Society

Authors & Affiliations

Peter Fromherz and Alfred Stett

  • Department of Membrane and Neurophysics, Max-Planck-Institute of Biochemistry, D-82152 Martinsried-München, Germany

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Issue

Vol. 75, Iss. 8 — 21 August 1995

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