Monte Carlo Simulation of the Rapid Crystallization of Bismuth-Doped Silicon

Kenneth A. Jackson, George H. Gilmer, and Dmitri E. Temkin
Phys. Rev. Lett. 75, 2530 – Published 25 September 1995
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Abstract

In this Letter we report Ising model simulations of the growth of alloys which predict quite different behavior near and far from equilibrium. Our simulations reproduce the phenomenon which has been termed “solute trapping,” where concentrations of solute, which are far in excess of the equilibrium concentrations, are observed in the crystal after rapid crystallization. This phenomenon plays an important role in many processes which involve first order phase changes which take place under conditions far from equilibrium. The underlying physical basis for it has not been understood, but these Monte Carlo simulations provide a powerful means for investigating it.

  • Received 17 January 1995

DOI:https://doi.org/10.1103/PhysRevLett.75.2530

©1995 American Physical Society

Authors & Affiliations

Kenneth A. Jackson1, George H. Gilmer2, and Dmitri E. Temkin3

  • 1Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
  • 2AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • 3Central Scientific-Research Institute of Ferrous Metallurgy, Moscow 107005, Russia

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Vol. 75, Iss. 13 — 25 September 1995

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