Direct Observation of Friedel Oscillations around Incorporated S<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">i</mi></mrow><mrow><mi mathvariant="normal">Ga</mi></mrow></msub></mrow></math></span> Dopants in GaAs by Low-Temperature Scanning Tunneling Microscopy

M. C. M. M. van der Wielen; A. J. A. van Roij; H. van Kempen

doi:10.1103/PhysRevLett.76.1075

Direct Observation of Friedel Oscillations around Incorporated S $i_{Ga}$ Dopants in GaAs by Low-Temperature Scanning Tunneling Microscopy

M. C. M. M. van der Wielen, A. J. A. van Roij, and H. van Kempen

Phys. Rev. Lett. 76, 1075 – Published 12 February 1996

Abstract

We report the direct imaging of electrically active Si dopants near the GaAs(110) surface with a scanning tunneling microscope at a temperature of 4.2 K. In the filled state images, we observe patterns of rings which are centered around the individual doping atoms. We believe these ring patterns are induced by the individual impurities, which, due to their charge, disturb the local potential and cause oscillations in the charge density, also called Friedel oscillations. In the empty state images no Friedel oscillations can be observed.