We have investigated the room temperature diffusion and trapping phenomena of ion-generated point defects in crystalline Si. The point defects, injected by low energy Si, Ge, and Pt implants into the bulk of silicon wafers, were monitored measuring the defect-induced dopant deactivation by spreading resistance profiling. Dopant deactivation is detected up to depths of several microns beyond the region directly modified by the ions. It is demonstrated that long-range migration of Si self-interstitials is responsible for the observed phenomena.

• Received 7 August 1995

DOI:https://doi.org/10.1103/PhysRevLett.76.1493