Spin-Polarized Intergrain Tunneling in La2/3Sr1/3MnO3

H. Y. Hwang, S-W. Cheong, N. P. Ong, and B. Batlogg
Phys. Rev. Lett. 77, 2041 – Published 2 September 1996
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Abstract

The magnetoresistance (MR) and the field dependent magnetization have been systematically examined in the low temperature ferromagnetic metallic state of single crystal and polycrystalline La2/3Sr1/3MnO3. We find that the intrinsic negative MR in single crystal is due to the suppression of spin fluctuations, and magnetic domain boundaries do not dominate the scattering process. In contrast, we demonstrate that the MR in the polycrystalline samples exhibits two distinct regions: large MR at low fields dominated by spin-polarized tunneling between grains and high field MR which is remarkably temperature independent from 5 to 280 K.

  • Received 27 March 1996

DOI:https://doi.org/10.1103/PhysRevLett.77.2041

©1996 American Physical Society

Authors & Affiliations

H. Y. Hwang1,2, S-W. Cheong1, N. P. Ong2, and B. Batlogg1

  • 1Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
  • 2Joseph Henry Laboratories of Physics, Princeton University, Princeton, New Jersey 08544

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Vol. 77, Iss. 10 — 2 September 1996

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