Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems

M. J. Yang; C. H. Yang; B. R. Bennett; B. V. Shanabrook

doi:10.1103/PhysRevLett.78.4613

Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems

M. J. Yang, C. H. Yang, B. R. Bennett, and B. V. Shanabrook

Phys. Rev. Lett. 78, 4613 – Published 16 June 1997

Abstract

InAs/GaSb composite quantum wells sandwiched by AlSb are studied by using capacitance-voltage, quantum Hall, and three-terminal transfer measurements. Our data reveal a positive energy gap resulting from the hybridization of in-plane dispersions of electrons in InAs and holes in GaSb for conventionally recognized “semimetallic” InAs/GaSb heterostructures.