Strong Tunneling in the Single-Electron Transistor

P. Joyez, V. Bouchiat, D. Esteve, C. Urbina, and M. H. Devoret
Phys. Rev. Lett. 79, 1349 – Published 18 August 1997
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Abstract

We have investigated the suppression of single-electron charging effects in metallic single-electron transistors when the conductance of the tunnel junctions becomes larger than the conductance quantum e2/h. We find that the Coulomb blockade of the conductance is progressively shifted at lower temperatures. The experimental results agree quantitatively with the available 1/T expansion at high temperature, and qualitatively with the predictions of an effective two-state model at low temperature, which predicts at T=0 a blockade of conductance for all gate voltages.

  • Received 27 January 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.1349

©1997 American Physical Society

Authors & Affiliations

P. Joyez, V. Bouchiat, D. Esteve, C. Urbina, and M. H. Devoret

  • Service de Physique de l'Etat Condensé, Commissariat à l'Energie Atomique, Saclay, 91191 Gif-sur-Yvette, France

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Vol. 79, Iss. 7 — 18 August 1997

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