<i>In Situ</i> Band Gap Engineering of Carbon Nanotubes

Vincent H. Crespi; Marvin L. Cohen; Angel Rubio

doi:10.1103/PhysRevLett.79.2093

In Situ Band Gap Engineering of Carbon Nanotubes

Vincent H. Crespi, Marvin L. Cohen, and Angel Rubio

Phys. Rev. Lett. 79, 2093 – Published 15 September 1997

Abstract

Bond rotation defects close the gap in large-gap nanotubes, open the gap in small-gap nanotubes, and increase the density of states in metallic nanotubes. Not only are these defects likely to be present in as-grown nanotubes, but they could be introduced locally into intact nanotubes, thereby opening a new road towards device applications.

Received 8 May 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.2093

Authors & Affiliations

Vincent H. Crespi and Marvin L. Cohen

Department of Physics, University of California at Berkeley, Berkeley, California 94720, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Angel Rubio