Enhanced Dielectronic Recombination in Crossed Electric and Magnetic Fields

F. Robicheaux and M. S. Pindzola
Phys. Rev. Lett. 79, 2237 – Published 22 September 1997
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Abstract

The dependence of the dielectronic recombination cross section on crossed electric and magnetic fields is described. The enhancement of this cross section due to a static electric field is further increased when a magnetic field is added perpendicular to the electric field. Calculation of this field induced enhancement is presented for a realistic atomic model, and the mechanism for the enhancement is discussed.

  • Received 5 May 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.2237

©1997 American Physical Society

Authors & Affiliations

F. Robicheaux and M. S. Pindzola

  • Department of Physics, Auburn University, Auburn, Alabama 36849

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Issue

Vol. 79, Iss. 12 — 22 September 1997

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