Charged Excitons in Self-Assembled Semiconductor Quantum Dots

R. J. Warburton, C. S. Dürr, K. Karrai, J. P. Kotthaus, G. Medeiros-Ribeiro, and P. M. Petroff
Phys. Rev. Lett. 79, 5282 – Published 29 December 1997
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Abstract

Interband excitations of an ensemble of InAs self-assembled quantum dots have been directly observed in transmission experiments. The dots are embedded in a field-effect structure allowing us to load the dots electrically. We establish an exact correspondence between Coulomb blockade in the device's vertical transport properties and Pauli blocking in the transmission spectra. We observe substantial shifts, up to 20 meV, in the energies of the higher excitations on occupation of the electron ground state. We argue that this is a consequence of an exciton-electron interaction.

  • Received 2 September 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.5282

©1997 American Physical Society

Authors & Affiliations

R. J. Warburton1, C. S. Dürr1, K. Karrai1, J. P. Kotthaus1,2, G. Medeiros-Ribeiro2, and P. M. Petroff2

  • 1Sektion Physik der Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München, Germany
  • 2Center for Quantized Electronic Structures (QUEST) and Materials Department, University of California, Santa Barbara, California 93106

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Issue

Vol. 79, Iss. 26 — 29 December 1997

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