Multipactor Discharge on a Dielectric

R. A. Kishek and Y. Y. Lau
Phys. Rev. Lett. 80, 193 – Published 5 January 1998
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Abstract

This paper proposes a novel theory of single-surface multipactor discharge on a dielectric, such as an rf window. Using a Monte Carlo simulation, we obtain the susceptibility diagram, applicable to a wide range of materials, in terms of the rf electric field and of the dc electric field that may result from dielectric charging. The electron multiplication mechanism assumes realistic yield curves of secondary electrons, including distributions of emission velocities and angles for these electrons. The susceptibility diagram thus constructed allows an immediate assessment of the range of rf power over which multipactor may be expected to occur. A simple analytic theory is constructed to explain the simulation results.

  • Received 14 April 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.193

©1998 American Physical Society

Authors & Affiliations

R. A. Kishek*,† and Y. Y. Lau

  • Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104

  • *Present address: Institute for Plasma Research, University of Maryland, College Park, MD 20742.
  • Electronic address: ramiak@ipr.umd.edu
  • Electronic address: yylau@umich.edu

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Vol. 80, Iss. 1 — 5 January 1998

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