“Electronic Growth” of Metallic Overlayers on Semiconductor Substrates

Zhenyu Zhang, Qian Niu, and Chih-Kang Shih
Phys. Rev. Lett. 80, 5381 – Published 15 June 1998
PDFExport Citation

Abstract

We present a novel “electronic growth” model for metallic thin films on semiconductor substrates. Depending on the competition between the effects of quantum confinement, charge spilling, and interface-induced Friedel oscillations, different types of film stability are defined, as characterized by the existence of critical/magic thicknesses for smooth growth. In particular, smooth growth can be achieved only above a few monolayers for noble metals, and only for the first layer for alkali metals.

  • Received 3 November 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.5381

©1998 American Physical Society

Authors & Affiliations

Zhenyu Zhang

  • Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032

Qian Niu and Chih-Kang Shih

  • Department of Physics, University of Texas at Austin, Austin, Texas 78712

References (Subscription Required)

Click to Expand
Issue

Vol. 80, Iss. 24 — 15 June 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×