Magnetoresistance in excess of 200% in Ballistic Ni Nanocontacts at Room Temperature and 100 Oe

N. García, M. Muñoz, and Y.-W. Zhao
Phys. Rev. Lett. 82, 2923 – Published 5 April 1999
PDFExport Citation

Abstract

We present magnetoresistance experiments in magnetic Ni nanocontacts in the ballistic transport regime at room temperature. It is shown that the magnetoresistance for a few-atom contact reaches values of 280% at room temperature and for applied magnetic fields of 100 Oe. Results are presented for over 50 samples showing the trend that the smaller the contact the larger the magnetoresistance response. This indicates that the effect arises just at the nanocontact.

  • Received 5 November 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.2923

©1999 American Physical Society

Authors & Affiliations

N. García, M. Muñoz, and Y.-W. Zhao

  • Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas (CSIC), Serrano 144, E-28006 Madrid, Spain

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 14 — 5 April 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×