Critical Fluctuation-Induced Thinning of 4He Films near the Superfluid Transition

R. Garcia and M. H. W. Chan
Phys. Rev. Lett. 83, 1187 – Published 9 August 1999
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Abstract

We report dielectric constant measurements showing critical fluctuation-induced thinning of 4He films near the superfluid transition. The films are adsorbed on a stack of copper electrodes suspended at different heights above bulk liquid. We calibrate the measurements by assuming that the film thickness away from the transition region at different heights is accurately given by theory. The thinning is found to be consistent with finite-size scaling, if the value of the scaling function for each thickness is normalized by its value at the minimum.

  • Received 15 December 1998

DOI:https://doi.org/10.1103/PhysRevLett.83.1187

©1999 American Physical Society

Authors & Affiliations

R. Garcia and M. H. W. Chan

  • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802

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Issue

Vol. 83, Iss. 6 — 9 August 1999

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