Measurement of the Excited-State Lifetime of a Microelectronic Circuit

K. W. Lehnert, K. Bladh, L. F. Spietz, D. Gunnarsson, D. I. Schuster, P. Delsing, and R. J. Schoelkopf
Phys. Rev. Lett. 90, 027002 – Published 17 January 2003

Abstract

We demonstrate that a continuously measured microelectronic circuit, the Cooper-pair box measured by a radio-frequency single-electron transistor, approximates a quantum two-level system. We extract the Hamiltonian of the circuit through resonant spectroscopy and measure the excited-state lifetime. The lifetime is more than 105 times longer than the inverse transition frequency of the two-level system, even though the measurement is active. This lifetime is also comparable to an estimate of the known upper limit, set by spontaneous emission, for this circuit.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 20 June 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.027002

©2003 American Physical Society

Authors & Affiliations

K. W. Lehnert1,*, K. Bladh2, L. F. Spietz1, D. Gunnarsson2, D. I. Schuster1, P. Delsing2, and R. J. Schoelkopf1

  • 1Department of Applied Physics and Physics, Yale University, New Haven, Connecticut 06511
  • 2Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96, Göteborg, Sweden

  • *Email address: konrad.lehnert@yale.edu Group Web site: www.eng.yale.edu/rslab

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 90, Iss. 2 — 17 January 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×