Lateral Scaling in Carbon-Nanotube Field-Effect Transistors

S. J. Wind, J. Appenzeller, and Ph. Avouris

Phys. Rev. Lett. 91, 058301 – Published 29 July 2003

Abstract

We have fabricated carbon-nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky-barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting carbon nanotubes over at least a few hundred nanometers, even for relatively small carrier velocities.

Received 31 March 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.058301

Authors & Affiliations

S. J. Wind^*, J. Appenzeller, and Ph. Avouris

IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

^*Present address: Department of Applied Physics and Applied Mathematics, Columbia University, 1020 Shapiro CEPSR, 530 W. 120th Street, New York,New York 10027, USA.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Issue

Vol. 91, Iss. 5 — 1 August 2003

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review Letters