Optical Emission from Excess Si Defect Centers in Si Nanostructures

X. L. Wu, S. J. Xiong, G. G. Siu, G. S. Huang, Y. F. Mei, Z. Y. Zhang, S. S. Deng, and C. Tan
Phys. Rev. Lett. 91, 157402 – Published 9 October 2003

Abstract

Four groups of Si nanostructures with and without βSiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436 nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si atoms in these Si nanostructures. The energy levels of electrons in Si nanocrystals with vacancy defects formed from the excess Si atoms are calculated and the characteristics of the obtained density of states coincide with the observed double-peak emission. The present work provides a possible mechanism of the blue emission in various Si nanostructures.

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  • Received 21 August 2002

DOI:https://doi.org/10.1103/PhysRevLett.91.157402

©2003 American Physical Society

Authors & Affiliations

X. L. Wu1,*, S. J. Xiong1, G. G. Siu2, G. S. Huang1, Y. F. Mei2, Z. Y. Zhang1, S. S. Deng1, and C. Tan1

  • 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China
  • 2Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China

  • *Corresponding author. Email address: hkxlwu@nju.edu.cn

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Vol. 91, Iss. 15 — 10 October 2003

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