Exciton Regeneration at Polymeric Semiconductor Heterojunctions

Arne C. Morteani, Paiboon Sreearunothai, Laura M. Herz, Richard H. Friend, and Carlos Silva
Phys. Rev. Lett. 92, 247402 – Published 18 June 2004

Abstract

Control of the band-edge offsets at heterojunctions between organic semiconductors allows efficient operation of either photovoltaic or light-emitting diodes. We investigate systems where the exciton is marginally stable against charge separation and show via E-field-dependent time-resolved photoluminescence spectroscopy that excitons that have undergone charge separation at a heterojunction can be efficiently regenerated. This is because the charge transfer produces a geminate electron-hole pair (separation 2.2–3.1 nm) which may collapse into an exciplex and then endothermically (EA=100200meV) back transfer towards the exciton.

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  • Received 16 October 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.247402

©2004 American Physical Society

Authors & Affiliations

Arne C. Morteani, Paiboon Sreearunothai, Laura M. Herz*, Richard H. Friend, and Carlos Silva

  • Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom

  • *Current address: Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Corresponding author. Email: cs271@cam.ac.uk

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Issue

Vol. 92, Iss. 24 — 18 June 2004

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