Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

B. L. Zink, R. Pietri, and F. Hellman
Phys. Rev. Lett. 96, 055902 – Published 7 February 2006

Abstract

We report the thermal conductivity and specific heat of amorphous silicon thin films measured from 5–300 K using silicon-nitride membrane-based microcalorimeters. Above 50 K the thermal conductivity of thin-film amorphous silicon agrees with values previously reported by other authors. However, our data show no plateau, with a low T suppression of the thermal conductivity that suggests that the scattering of long wavelength, low Q vibrations goes as Q2. The specific heat shows Debye-like behavior below 15 K, with θD=487±5K, and is consistent with a very small contribution of tunneling states in amorphous silicon. Above 15 K, the specific heat deviates less from Debye behavior than does its crystalline allotrope, indicating no significant excess modes (boson peak) in amorphous silicon.

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  • Received 2 September 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.055902

©2006 American Physical Society

Authors & Affiliations

B. L. Zink1,2,*, R. Pietri1, and F. Hellman1,3

  • 1Department of Physics, University of California, San Diego, La Jolla, California 92093, USA
  • 2National Institute of Standards and Technology, 325 Broadway MC 817.03, Boulder, Colorado 80305, USA
  • 3Department of Physics, University of California, Berkeley, California 94720-7300, USA

  • *Electronic address: bzink@boulder.nist.gov

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Vol. 96, Iss. 5 — 10 February 2006

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