Photoinduced Transient Stark Spectroscopy in Organic Semiconductors: A Method for Charge Mobility Determination in the Picosecond Regime

J. Cabanillas-Gonzalez, T. Virgili, A. Gambetta, G. Lanzani, T. D. Anthopoulos, and D. M. de Leeuw
Phys. Rev. Lett. 96, 106601 – Published 13 March 2006

Abstract

Subpicosecond photoinduced Stark spectroscopy experiments are carried out for measuring charge carrier mobility in organic semiconductors. The technique is demonstrated in state-of-art devices based on methanofullerene. The transient mobility of photogenerated charge carriers is measured in the picosecond time domain. Electric field dependent mobility is observed from the earliest time scales. In addition, two distinct transport regimes are revealed: a short-lived state, approximately 10 ps, of high mobility and a transient towards the trap limited transport, associated with the mesoscopic structure of the medium.

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  • Received 13 October 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.106601

©2006 American Physical Society

Authors & Affiliations

J. Cabanillas-Gonzalez, T. Virgili, A. Gambetta, and G. Lanzani

  • IFN-CNR, Dipartimento di Fisica, ULTRAS-INFM-CNR, Politecnico di Milano, Milano 20133, Italy

T. D. Anthopoulos

  • Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom

D. M. de Leeuw

  • Philips Research Laboratories, Professor Holstlaan 4 (WAG 11), 5656 AA Eindhoven, The Netherlands

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Issue

Vol. 96, Iss. 10 — 17 March 2006

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