Electronic Structure of Defect States in Hydroxylated and Reduced Rutile TiO2(110) Surfaces

Cristiana Di Valentin, Gianfranco Pacchioni, and Annabella Selloni
Phys. Rev. Lett. 97, 166803 – Published 18 October 2006

Abstract

It has been experimentally observed that a bridging oxygen vacancy on the rutile TiO2(110) surface introduces localized Ti3+ 3d1 states about 1 eV below the conduction band which are not removed upon dissociation of a water molecule and formation of a pair of hydroxyl groups. Density functional calculations based on pure exchange-correlation functionals have not been able to satisfactorily reproduce and analyze these findings. Here we show that a correct description of the localized defect states on reduced and hydroxylated TiO2(110) is achieved only if proper geometry relaxation is accounted for using hybrid exchange functionals. We confirm the electron trapping nature of Ti(OH) groups but find no evidence that these defects should also act as hole traps by formation of Ti4+(OH) radicals.

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  • Received 2 May 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.166803

©2006 American Physical Society

Authors & Affiliations

Cristiana Di Valentin and Gianfranco Pacchioni

  • Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 53, 20125 Milano, Italy

Annabella Selloni

  • Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA

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Issue

Vol. 97, Iss. 16 — 20 October 2006

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