Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans
Phys. Rev. Lett. 97, 206805 – Published 16 November 2006

Abstract

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up and spin-down electrons under magnetic field. The first resonance is consistent with the binding energy of the neutral D0 state of an arsenic donor. The second resonance shows a reduced charging energy due to the electrostatic coupling of the charged D state with electrodes. Excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices.

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  • Received 17 July 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.206805

©2006 American Physical Society

Authors & Affiliations

H. Sellier*, G. P. Lansbergen, J. Caro, and S. Rogge

  • Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans

  • InterUniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium

  • *Present address: Laboratoire de Spectrométrie Physique, Université Joseph Fourier, Grenoble, France.

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Vol. 97, Iss. 20 — 17 November 2006

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