Low-Energy Theory of Disordered Graphene

Alexander Altland
Phys. Rev. Lett. 97, 236802 – Published 4 December 2006

Abstract

At low values of external doping, graphene displays a wealth of unconventional transport properties. Perhaps most strikingly, it supports a robust “metallic” regime, with universal conductance of the order of the conductance quantum. We here apply a combination of mean-field and bosonization methods to explore the large scale transport properties of the system. We find that, irrespective of the doping level, disordered graphene is subject to the common mechanisms of Anderson localization. However, at low doping a number of renormalization mechanisms conspire to protect the conductivity of the system, to an extend that strong localization may not be seen even at temperatures much smaller than those underlying present experimental work.

  • Received 1 August 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.236802

©2006 American Physical Society

Authors & Affiliations

Alexander Altland

  • Institut für Theoretische Physik, Universität zu Köln, Zülpicher Strasse 77, 50937 Köln, Germany

See Also

Effect of Disorder on Transport in Graphene

I. L. Aleiner and K. B. Efetov
Phys. Rev. Lett. 97, 236801 (2006)

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Issue

Vol. 97, Iss. 23 — 8 December 2006

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