Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene

Jun Yan, Yuanbo Zhang, Philip Kim, and Aron Pinczuk
Phys. Rev. Lett. 98, 166802 – Published 18 April 2007

Abstract

Gate-modulated low-temperature Raman spectra reveal that the electric field effect (EFE), pervasive in contemporary electronics, has marked impacts on long-wavelength optical phonons of graphene. The EFE in this two-dimensional honeycomb lattice of carbon atoms creates large density modulations of carriers with linear dispersion (known as Dirac fermions). Our EFE Raman spectra display the interactions of lattice vibrations with these unusual carriers. The changes of phonon frequency and linewidth demonstrate optically the particle-hole symmetry about the charge-neutral Dirac point. The linear dependence of the phonon frequency on the EFE-modulated Fermi energy is explained as the electron-phonon coupling of massless Dirac fermions.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 22 December 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.166802

©2007 American Physical Society

Authors & Affiliations

Jun Yan1, Yuanbo Zhang1, Philip Kim1, and Aron Pinczuk1,2

  • 1Department of Physics, Columbia University, New York, New York 10027, USA
  • 2Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 98, Iss. 16 — 20 April 2007

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×