Random Resistor Network Model of Minimal Conductivity in Graphene

Vadim V. Cheianov, Vladimir I. Fal’ko, Boris L. Altshuler, and Igor L. Aleiner
Phys. Rev. Lett. 99, 176801 – Published 22 October 2007

Abstract

Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the pn junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

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  • Received 20 June 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.176801

©2007 American Physical Society

Authors & Affiliations

Vadim V. Cheianov1, Vladimir I. Fal’ko1, Boris L. Altshuler1,2,3, and Igor L. Aleiner2

  • 1Physics Department, Lancaster University, Lancaster, LA1 4YB, United Kingdom
  • 2Physics Department, Columbia University, 538 West 120th Street, New York, New York 10027, USA
  • 3NEC-Laboratories America, Inc., 4 Independence Way, Princeton, New Jersey 085540, USA

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Issue

Vol. 99, Iss. 17 — 26 October 2007

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