Graphene Bilayer with a Twist: Electronic Structure

J. M. B. Lopes dos Santos, N. M. R. Peres, and A. H. Castro Neto
Phys. Rev. Lett. 99, 256802 – Published 19 December 2007

Abstract

We consider a graphene bilayer with a relative small angle rotation between the layers—a stacking defect often seen in the surface of graphite—and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with observations in epitaxial graphene, we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single-layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap.

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  • Received 17 April 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.256802

©2007 American Physical Society

Authors & Affiliations

J. M. B. Lopes dos Santos1, N. M. R. Peres2, and A. H. Castro Neto3

  • 1CFP and Departamento de Física, Faculdade de Ciências, Universidade do Porto, 4169-007 Porto, Portugal
  • 2Centro de Física and Departamento de Física, Universidade do Minho, P-4710-057 Braga, Portugal
  • 3Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA

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Issue

Vol. 99, Iss. 25 — 21 December 2007

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