• Open Access

Coherent energy exchange between carriers and phonons in Peierls-distorted bismuth unveiled by broadband XUV pulses

Romain Géneaux, Iurii Timrov, Christopher J. Kaplan, Andrew D. Ross, Peter M. Kraus, and Stephen R. Leone
Phys. Rev. Research 3, 033210 – Published 2 September 2021

Abstract

In Peierls-distorted materials, photoexcitation leads to a strongly coupled transient response between structural and electronic degrees of freedom, always measured independently of each other. Here we use transient reflectivity in the extreme ultraviolet to quantify both responses in photoexcited bismuth in a single measurement. With the help of first-principles calculations based on density-functional theory (DFT) and time-dependent DFT, the real-space atomic motion and the temperature of both electrons and holes as a function of time are captured simultaneously, retrieving an anticorrelation between the A1g phonon dynamics and carrier temperature. The results reveal a coherent, bidirectional energy exchange between carriers and phonons, which is a dynamical counterpart of the static Peierls-Jones distortion, providing validation of previous theoretical predictions.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
5 More
  • Received 25 May 2021
  • Revised 21 July 2021
  • Accepted 4 August 2021

DOI:https://doi.org/10.1103/PhysRevResearch.3.033210

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsAtomic, Molecular & Optical

Authors & Affiliations

Romain Géneaux1,2,*, Iurii Timrov3, Christopher J. Kaplan1, Andrew D. Ross1, Peter M. Kraus1,†, and Stephen R. Leone1,4,5

  • 1Department of Chemistry, University of California, Berkeley, California 94720, USA
  • 2Université Paris-Saclay, CEA, CNRS, LIDYL, 91191 Gif-sur-Yvette, France
  • 3Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
  • 4Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 5Department of Physics, University of California, Berkeley, California 94720, USA

  • *romain.geneaux@cea.fr
  • Present address: Advanced Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, Netherlands.

Article Text

Click to Expand

References

Click to Expand
Issue

Vol. 3, Iss. 3 — September - November 2021

Subject Areas
Reuse & Permissions
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Research

Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

×

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×