Error thresholds for Abelian quantum double models: Increasing the bit-flip stability of topological quantum memory

Ruben S. Andrist, James R. Wootton, and Helmut G. Katzgraber
Phys. Rev. A 91, 042331 – Published 24 April 2015

Abstract

Current approaches for building quantum computing devices focus on two-level quantum systems which nicely mimic the concept of a classical bit, albeit enhanced with additional quantum properties. However, rather than artificially limiting the number of states to two, the use of d-level quantum systems (qudits) could provide advantages for quantum information processing. Among other merits, it has recently been shown that multilevel quantum systems can offer increased stability to external disturbances. In this study we demonstrate that topological quantum memories built from qudits, also known as Abelian quantum double models, exhibit a substantially increased resilience to noise. That is, even when taking into account the multitude of errors possible for multilevel quantum systems, topological quantum error-correction codes employing qudits can sustain a larger error rate than their two-level counterparts. In particular, we find strong numerical evidence that the thresholds of these error-correction codes are given by the hashing bound. Considering the significantly increased error thresholds attained, this might well outweigh the added complexity of engineering and controlling higher-dimensional quantum systems.

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  • Received 23 June 2014

DOI:https://doi.org/10.1103/PhysRevA.91.042331

©2015 American Physical Society

Authors & Affiliations

Ruben S. Andrist1, James R. Wootton2, and Helmut G. Katzgraber1,3,4

  • 1Santa Fe Institute, 1399 Hyde Park Road, Santa Fe, New Mexico 87501, USA
  • 2Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 3Department of Physics and Astronomy, Texas A&M University, College Station, Texas 77843-4242, USA
  • 4Materials Science and Engineering Program, Texas A&M University, College Station, Texas 77843, USA

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Issue

Vol. 91, Iss. 4 — April 2015

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