Imaging Graphene Field-Effect Transistors on Diamond Using Nitrogen-Vacancy Microscopy

Scott E. Lillie, Nikolai Dontschuk, David A. Broadway, Daniel L. Creedon, Lloyd C.L. Hollenberg, and Jean-Philippe Tetienne
Phys. Rev. Applied 12, 024018 – Published 9 August 2019

Abstract

The application of imaging techniques based on ensembles of nitrogen-vacancy (N-V) sensors in diamond to characterize electrical devices has been proposed, but the compatibility of N-V sensing with operational gated devices remains largely unexplored. Here we report the fabrication of graphene field-effect transistors directly on the diamond surface and their characterization by N-V microscopy. The current density within the gated graphene is reconstructed from N-V-magnetometry measurements under both mostly p- and n-type doping, but the exact doping level is found to be affected by the measurements. Additionally, we observe a surprisingly large modulation of the electric field at the diamond surface under an applied gate potential, seen in N-V-photoluminescence and N-V-electrometry measurements, suggesting a complex electrostatic response of the oxide-graphene-diamond structure. Possible solutions to mitigate these effects are discussed.

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  • Received 30 May 2019

DOI:https://doi.org/10.1103/PhysRevApplied.12.024018

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Scott E. Lillie1,2, Nikolai Dontschuk1,2,*, David A. Broadway1,2, Daniel L. Creedon2, Lloyd C.L. Hollenberg1,2, and Jean-Philippe Tetienne2

  • 1Centre for Quantum Computation and Communication Technology, School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
  • 2School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia

  • *dontschuk.n@unimelb.edu.au

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Vol. 12, Iss. 2 — August 2019

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