Abstract
The application of imaging techniques based on ensembles of nitrogen-vacancy (-) sensors in diamond to characterize electrical devices has been proposed, but the compatibility of - sensing with operational gated devices remains largely unexplored. Here we report the fabrication of graphene field-effect transistors directly on the diamond surface and their characterization by - microscopy. The current density within the gated graphene is reconstructed from --magnetometry measurements under both mostly - and -type doping, but the exact doping level is found to be affected by the measurements. Additionally, we observe a surprisingly large modulation of the electric field at the diamond surface under an applied gate potential, seen in --photoluminescence and --electrometry measurements, suggesting a complex electrostatic response of the oxide-graphene-diamond structure. Possible solutions to mitigate these effects are discussed.
2 More- Received 30 May 2019
DOI:https://doi.org/10.1103/PhysRevApplied.12.024018
© 2019 American Physical Society