The $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_2$ interface is a central component of many $\mathrm{Si}\mathrm{C}$ electronic devices. Defects intrinsic to this interface can have a profound effect on their operation and reliability. It is therefore crucial to both understand the nature of these defects and develop characterization methods to enable optimized $\mathrm{Si}\mathrm{C}$-based devices. Here we make use of confocal microscopy to address single $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_2$-related defects and show the technique to be a noncontact, nondestructive, spatially resolved and rapid means of assessing thequality of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_2$ interface. This is achieved by a systematic investigation of the defect density of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_2$ interface by varying the parameters of a nitric oxide passivation anneal after oxidation. Standard capacitance-based characterization techniques are used to benchmark optical emission rates and densities of the optically active $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_2$-related defects. Further insight into the nature of these defects is provided by low-temperature optical measurements on single defects.

• Received 13 June 2019
• Revised 6 August 2019

DOI:https://doi.org/10.1103/PhysRevApplied.12.044024