Abstract
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realize high-quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon microring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to . This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.
- Received 11 October 2020
- Revised 18 January 2021
- Accepted 10 March 2021
DOI:https://doi.org/10.1103/PhysRevApplied.15.044014
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