Dual topological insulator device with disorder robustness

Bruno Focassio, Gabriel R. Schleder, Armando Pezo, Marcio Costa, and Adalberto Fazzio
Phys. Rev. B 102, 045414 – Published 14 July 2020

Abstract

Two-dimensional Na3Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for device design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of Na3Bi in the presence of intrinsic defects, investigating the robustness of the edge states and the resulting transport properties. We apply a recursive Green's function technique enabling the study of disordered systems with lengths comparable to experimentally synthesized materials, in the order of micrometers. We combine our findings to propose a topological insulator device, where intrinsic defects are used to filter the response of trivial bulk states. This results in a stable conductance throughout a large range of electronic temperatures, and controllable by a perpendicular electric field. Our proposal is general, enabling the design of various dual topological insulator devices.

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  • Received 2 April 2020
  • Accepted 22 June 2020

DOI:https://doi.org/10.1103/PhysRevB.102.045414

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Bruno Focassio1,2,*, Gabriel R. Schleder1,2, Armando Pezo1,2, Marcio Costa3,2, and Adalberto Fazzio2,1,†

  • 1Center for Natural and Human Sciences, Federal University of ABC (UFABC), 09210-580, Santo André, Sāo Paulo, Brazil
  • 2Brazilian Nanotechnology National Laboratory (LNNano), CNPEM, 13083-970, Campinas, Sāo Paulo, Brazil
  • 3Physics Department, Fluminense Federal University, 24210-346, Niterói, Rio de Janeiro, Brazil

  • *b.focassio@ufabc.edu.br
  • adalberto.fazzio@lnnano.cnpem.br

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Issue

Vol. 102, Iss. 4 — 15 July 2020

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