Semiconductor/ferromagnet hybrid systems are attractive platforms for investigation of spin conversion physics, such as the (inverse) spin Hall effect. However, the superimposed rectification currents originating from anisotropic magnetoresistance have been a serious problem preventing unambiguous detection of dc spin Hall electric signals in semiconductors. In this study, we applied a microwave frequency inductive technique immune to such rectification effects to investigate the spin to charge conversion in heterostructures based on Si, one of the primitive semiconductors. The Si doping dependence of the spin-orbit torque conductivity was obtained for the Si/Cu/NiFe trilayer system. A monotonous modulation of the spin-orbit torque conductivity by doping and relative sign change of spin to charge conversion between the degenerate $n$- and $p$-type Si samples were observed. These results unveil spin to charge conversion mechanisms in semiconductor/metal heterostructures and show a pathway for further exploration of spin-conversion physics in metal/semiconductor heterostructures.

• Received 17 June 2020
• Revised 7 December 2020
• Accepted 2 March 2021

DOI:https://doi.org/10.1103/PhysRevB.103.094430