Anisotropic scaling of ripple morphologies on high-fluence sputtered silicon

Adrian Keller, Rodolfo Cuerno, Stefan Facsko, and Wolfhard Möller
Phys. Rev. B 79, 115437 – Published 26 March 2009

Abstract

The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents αn=0.76±0.04 and αp=0.41±0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison to the predictions of single field and two-field (“hydrodynamic”) models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.

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  • Received 9 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.115437

©2009 American Physical Society

Authors & Affiliations

Adrian Keller1,*, Rodolfo Cuerno2, Stefan Facsko1, and Wolfhard Möller1

  • 1Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
  • 2Departamento de Matemáticas and Grupo Interdisciplinar de Sistemas Complejos (GISC), Universidad Carlos III de Madrid, Avenida de la Universidad 30, E-28911 Leganés, Spain

  • *a.keller@fzd.de

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Vol. 79, Iss. 11 — 15 March 2009

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