Depth-dependent critical behavior in V2H

Charo I. Del Genio, Johann Trenkler, Kevin E. Bassler, Peter Wochner, Dean R. Haeffner, George F. Reiter, Jianming Bai, and Simon C. Moss
Phys. Rev. B 79, 184113 – Published 29 May 2009

Abstract

Using x-ray diffuse scattering, we investigate the critical behavior of an order-disorder phase transition in a defective “skin layer” of V2H. In the skin layer, there exist walls of dislocation lines oriented normal to the surface. The density of dislocation lines within a wall decreases continuously with depth. We find that, because of this inhomogeneous distribution of defects, the transition effectively occurs at a depth-dependent local critical temperature. A depth-dependent scaling law is proposed to describe the corresponding critical ordering behavior.

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  • Received 17 February 2009

DOI:https://doi.org/10.1103/PhysRevB.79.184113

©2009 American Physical Society

Authors & Affiliations

Charo I. Del Genio1,2, Johann Trenkler1,3,*, Kevin E. Bassler1,2, Peter Wochner3, Dean R. Haeffner4, George F. Reiter1, Jianming Bai5, and Simon C. Moss1,2

  • 1Department of Physics, University of Houston, 617 Science and Research 1, 4800 Calhoun Road, Houston, Texas 77204-5005, USA
  • 2Texas Center for Superconductivity, Houston, Texas 77204, USA
  • 3Max Planck Institut für Metallforschung, D-70569 Stuttgart, Germany
  • 4Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439-4815, USA
  • 5Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

  • *Present address: Carl Zeiss SMT AG, Lithography Optics Division, Rudolf-Eber-Straße 2, D-73447 Oberkochen, Germany.

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Issue

Vol. 79, Iss. 18 — 1 May 2009

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