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Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

A. Morello, C. C. Escott, H. Huebl, L. H. Willems van Beveren, L. C. L. Hollenberg, D. N. Jamieson, A. S. Dzurak, and R. G. Clark
Phys. Rev. B 80, 081307(R) – Published 14 August 2009

Abstract

We describe a method to control and detect in single shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based single-electron transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the readout phase. Simulations show that the charge transfer signals are typically Δq0.2e—over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local electron spin resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale up.

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  • Received 16 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.081307

©2009 American Physical Society

Authors & Affiliations

A. Morello1,*, C. C. Escott1, H. Huebl1,†, L. H. Willems van Beveren1, L. C. L. Hollenberg2, D. N. Jamieson2, A. S. Dzurak1, and R. G. Clark1

  • 1ARC Centre of Excellence for Quantum Computer Technology, Schools of Electrical Engineering & Telecommunications and Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
  • 2ARC Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia

  • *a.morello@unsw.edu.au
  • Present address: Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany.

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Issue

Vol. 80, Iss. 8 — 15 August 2009

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