Abstract
We present a systematic study of the density of states (DOS) in electron accumulation layers near a interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in reservoir DOS can be moved in the transport window independently of the other device properties. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.
- Received 6 October 2009
DOI:https://doi.org/10.1103/PhysRevB.81.161304
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