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Probe and control of the reservoir density of states in single-electron devices

M. Möttönen, K. Y. Tan, K. W. Chan, F. A. Zwanenburg, W. H. Lim, C. C. Escott, J.-M. Pirkkalainen, A. Morello, C. Yang, J. A. van Donkelaar, A. D. C. Alves, D. N. Jamieson, L. C. L. Hollenberg, and A. S. Dzurak
Phys. Rev. B 81, 161304(R) – Published 8 April 2010

Abstract

We present a systematic study of the density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in reservoir DOS can be moved in the transport window independently of the other device properties. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

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  • Received 6 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.161304

©2010 American Physical Society

Authors & Affiliations

M. Möttönen1,2,3, K. Y. Tan1, K. W. Chan1, F. A. Zwanenburg1, W. H. Lim1, C. C. Escott1, J.-M. Pirkkalainen1,2, A. Morello1, C. Yang4, J. A. van Donkelaar4, A. D. C. Alves4, D. N. Jamieson4, L. C. L. Hollenberg4, and A. S. Dzurak1

  • 1Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering & Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
  • 2Department of Applied Physics/COMP, School of Science and Technology, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
  • 3Low Temperature Laboratory, School of Science and Technology, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
  • 4Centre for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia

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Issue

Vol. 81, Iss. 16 — 15 April 2010

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