Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

B. C. Johnson, B. Haberl, J. E. Bradby, J. C. McCallum, and J. S. Williams
Phys. Rev. B 83, 235205 – Published 6 June 2011

Abstract

A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80–300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

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  • Received 13 February 2011

DOI:https://doi.org/10.1103/PhysRevB.83.235205

©2011 American Physical Society

Authors & Affiliations

B. C. Johnson1,*,†, B. Haberl2, J. E. Bradby2, J. C. McCallum1, and J. S. Williams2

  • 1School of Physics, The University of Melbourne, Victoria 3010, Australia
  • 2Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200, Australia

  • *johnson.brett@jaea.go.jp
  • Present address: Semiconductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.

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Vol. 83, Iss. 23 — 15 June 2011

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