Origin of negative magnetoresistance of GaAs/(Ga,Mn)As core-shell nanowires

Christian Butschkow, Elisabeth Reiger, Andreas Rudolph, Stefan Geißler, Daniel Neumaier, Marcello Soda, Dieter Schuh, Georg Woltersdorf, Werner Wegscheider, and Dieter Weiss
Phys. Rev. B 87, 245303 – Published 6 June 2013

Abstract

We explore the anisotropy of the magnetoresistance of individual GaAs/(Ga,Mn)As core-shell nanowires which feature a strong negative magnetoresistance (NMR) and a very large magnetic anisotropy field. Our analysis of the magnetoresistance shows that the resistance anisotropy is dominated by the effective magnetic field and that the origin of the NMR is related to spin scattering rather than to weak localization in (Ga,Mn)As core-shell nanowires.

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  • Received 11 January 2013

DOI:https://doi.org/10.1103/PhysRevB.87.245303

©2013 American Physical Society

Authors & Affiliations

Christian Butschkow1, Elisabeth Reiger1, Andreas Rudolph1, Stefan Geißler1, Daniel Neumaier1, Marcello Soda1, Dieter Schuh1, Georg Woltersdorf1, Werner Wegscheider2, and Dieter Weiss1

  • 1Institute of Experimental and Applied Physics, University of Regensburg, 93053 Regensburg, Germany
  • 2ETH Zürich, 8093 Zürich, Switzerland

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Vol. 87, Iss. 24 — 15 June 2013

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