Ab initio calculation of ionization potential and electron affinity in solid-state organic semiconductors

Youngho Kang, Sang Ho Jeon, Youngmi Cho, and Seungwu Han
Phys. Rev. B 93, 035131 – Published 22 January 2016
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Abstract

We investigate the vertical ionization potential (IP) and electron affinity (EA) of organic semiconductors in the solid state that govern the optoelectrical property of organic devices using a fully ab initio way. The present method combines the density functional theory and many-body perturbation theory based on GW approximations. To demonstrate the accuracy of this approach, we carry out calculations on several prototypical organic molecules. Since IP and EA depend on the molecular orientation at the surface, the molecular geometry of the surface is explicitly considered through the slab model. The computed IP and EA are in reasonable and consistent agreements with spectroscopic data on organic surfaces with various molecular arrangements. However, the transport gaps are slightly underestimated in calculations, which can be explained by different screening effects between surface and bulk regions.

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  • Received 26 July 2015
  • Revised 16 December 2015

DOI:https://doi.org/10.1103/PhysRevB.93.035131

©2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Techniques
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Youngho Kang1, Sang Ho Jeon2, Youngmi Cho2, and Seungwu Han1,*

  • 1Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-755, Korea
  • 2CAE Team, Samsung Display Co., Ltd, 95 Samsung 2-ro, Giheung-gu, Yongin-City, Gyeonggi-Do 446-711, Korea

  • *hansw@snu.ac.kr

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Issue

Vol. 93, Iss. 3 — 15 January 2016

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